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Device Modeling
 

High frequency devices, including transistors and diodes can be measured and modeled at GigaTest. We utilize wafer probing, and Agilent's Device Modeling System to measure and extract both small and large signal models for these devices. The device modeling system includes an Agilent VNA, DC parameter analyzer and ICCAP software, and allows model extraction for the industry's most popular device models.

We also maintain the capability for measuring S-parameters, Ft and Noise parameters on transistor devices. These measurements can be taken over temperature, in addition to bias and frequency.

 
Device Modeling and Measurements from GigaTest
FET: Root, Curtice Quadratic, Curtice Cubic, Staatz
BJT: Gummel-Poon, Hybrid-Pi (Small-Signal)
Noise Parameter measurements
Diode Modeling
Ft Measurements
   
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